| MRC |
Requirement Statement |
Characteristics |
| ADAT |
BODY WIDTH |
0.290 INCHES MINIMUM AND 0.310 INCHES MAXIMUM |
| CQSZ |
INCLOSURE CONFIGURATION |
DUAL-IN-LINE |
| CZZZ |
MEMORY CAPACITY |
UNKNOWN |
| CQZP |
INPUT CIRCUIT PATTERN |
15 INPUT |
| CZEN |
VOLTAGE RATING AND TYPE PER CHARACTERISTIC |
5.0 VOLTS MAXIMUM POWER SOURCE |
| CWSG |
TERMINAL SURFACE TREATMENT |
SOLDER |
| CSWJ |
(NON-CORE DATA) WORD QUANTITY |
4096 |
| CRHL |
(NON-CORE DATA) BIT QUANTITY |
4096 |
| CZEQ |
TIME RATING PER CHACTERISTIC |
250.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 250.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
| CQSJ |
INCLOSURE MATERIAL |
CERAMIC AND GLASS |
| AFJQ |
STORAGE TEMP RANGE |
-65.0 TO 150.0 DEG CELSIUS |
| CQWX |
OUTPUT LOGIC FORM |
N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |
| TTQY |
TERMINAL TYPE AND QUANTITY |
18 PRINTED CIRCUIT |
| ADAU |
BODY HEIGHT |
0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM |
| AEHX |
MAXIMUM POWER DISSIPATION RATING |
440.0 MILLIWATTS |
| ADAQ |
BODY LENGTH |
0.910 INCHES MAXIMUM |
| CZER |
MEMORY DEVICE TYPE |
RAM |
| CBBL |
FEATURES PROVIDED |
W/DECODED OUTPUT AND 3-STATE OUTPUT AND POSITIVE OUTPUTS |
| AFGA |
OPERATING TEMP RANGE |
0.0 TO 70.0 DEG CELSIUS |
