| MRC |
Requirement Statement |
Characteristics |
| CQWX |
OUTPUT LOGIC FORM |
TRANSISTOR-TRANSISTOR LOGIC |
| AEHX |
MAXIMUM POWER DISSIPATION RATING |
910.0 MILLIWATTS |
| ADAT |
BODY WIDTH |
0.240 INCHES MINIMUM AND 0.325 INCHES MAXIMUM |
| CBBL |
FEATURES PROVIDED |
HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND W/STORAGE AND PROGRAMMABLE AND PROGRAMMED AND BIPOLAR AND 3-STATE OUTPUT AND SCHOTTKY AND HIGH SPEED AND EXPANDABLE AND W/BUFFERED OUTPUT AND W/DECODED OUTPUT AND W/ENABLE AND W/DISABLE |
| CZZZ |
MEMORY CAPACITY |
UNKNOWN |
| CQSZ |
INCLOSURE CONFIGURATION |
FLAT PACK |
| TTQY |
TERMINAL TYPE AND QUANTITY |
16 FLAT LEADS |
| CWSG |
TERMINAL SURFACE TREATMENT |
SOLDER |
| ADAU |
BODY HEIGHT |
0.085 INCHES MAXIMUM |
| ADAQ |
BODY LENGTH |
0.440 INCHES MAXIMUM |
| AFGA |
OPERATING TEMP RANGE |
-55.0 TO 125.0 DEG CELSIUS |
| CQSJ |
INCLOSURE MATERIAL |
CERAMIC AND GLASS |
| TEST |
TEST DATA DOCUMENT |
82577-932820 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| AFJQ |
STORAGE TEMP RANGE |
-65.0 TO 150.0 DEG CELSIUS |
| CZEN |
VOLTAGE RATING AND TYPE PER CHARACTERISTIC |
5.5 VOLTS MAXIMUM POWER SOURCE |
| CQZP |
INPUT CIRCUIT PATTERN |
10 INPUT |
| CRHL |
(NON-CORE DATA) BIT QUANTITY |
1024 |
| CZEQ |
TIME RATING PER CHACTERISTIC |
75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT |
| CSWJ |
(NON-CORE DATA) WORD QUANTITY |
256 |
| CZER |
MEMORY DEVICE TYPE |
ROM |
